Molecular-dynamics simulation of Ge film growth by cluster deposition

Authors
Lu, HW Feng, JY
Citation
Hw. Lu et Jy. Feng, Molecular-dynamics simulation of Ge film growth by cluster deposition, MODEL SIM M, 8(4), 2000, pp. 621-628
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING
ISSN journal
09650393 → ACNP
Volume
8
Issue
4
Year of publication
2000
Pages
621 - 628
Database
ISI
SICI code
0965-0393(200007)8:4<621:MSOGFG>2.0.ZU;2-P
Abstract
Ge thin-film growth from cluster beams has been investigated with molecular -dynamics simulations utilizing the Stillinger-Weber two- and three-body in teraction potentials. The spreading of Ge-atom clusters and the structure o f grown films have been studied as a function of incident cluster velocity. Higher surface diffusion and spreading of the deposited clusters were achi eved with a moderate cluster velocity. The epitaxial Ge (111) growth was ob tained under this cluster velocity.