Temperature and isotopic mass dependence of the direct band gap in semiconductors: LCAO calculations

Authors
Olguin, D Cantarero, A Cardona, M
Citation
D. Olguin et al., Temperature and isotopic mass dependence of the direct band gap in semiconductors: LCAO calculations, PHYS ST S-B, 220(1), 2000, pp. 33-39
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
220
Issue
1
Year of publication
2000
Pages
33 - 39
Database
ISI
SICI code
0370-1972(200007)220:1<33:TAIMDO>2.0.ZU;2-W
Abstract
Using perturbation theory, within a tight-binding (LCAO) approach, we have calculated the effects of electron-phonon interaction on the lowest direct band gap of Ge, GaAs and ZnSe. The agreement of the calculated temperature coefficient with experimental data is satisfactory. Following our approach, we have also calculated the dependence of the direct band gap on isotopic mass. The results are in close agreement with the experimental data.