Polar scattering rates in II-VI semiconductor quantum wells

The electronic scattering due to optical phonons in quantum wells (QWs) is investigated by using a many body perturbative formalism. After analyzing r eal and imaginary parts of self-energy for a confined electron gas interact ing with confined LO-phonons, we concentrate on the imaginary part or scatt ering rates of electrons in II-VI quantum wells. A detailed study of scatte ring rates as function of temperature, well-width and carrier concentration for screened and unscreened potential is presented. A comparison of dampin g between GaAs and CdTe QWs is made; in addition to that, the behavior of C dTe heterostructures as function of well-width, temperature, carrier concen tration and screening is followed. Confinement of LO-phonons influences def initely the scattering rates in quantum wells. Particularly in II-VI materi als it offers the possibility of tuning scattering rates and polaron life t ime with the electron layer width.