Micro-Raman studies of AlxGa1-xP/GaP graded structures

Citation
E. Zamora et al., Micro-Raman studies of AlxGa1-xP/GaP graded structures, PHYS ST S-B, 220(1), 2000, pp. 141-146
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
220
Issue
1
Year of publication
2000
Pages
141 - 146
Database
ISI
SICI code
0370-1972(200007)220:1<141:MSOAGS>2.0.ZU;2-2
Abstract
We report applications of the micro-Raman technique to study the compositio nal dependence of phonon modes in graded AlxGa1-xP layers. The dependence o f the phonon frequencies on the Al content was monitored in a single sample for two different crystallographic orientations. The measured compositiona l dependence of the LO and TO phonon frequencies are in good agreement with results of calculations based on the Modified Random Element Isodisplaceme nt (MREI) model. The Raman spectra of the samples reveal also the existence of other features due to disorder.