Hole energy levels in p-type delta-doped Si quantum wells: Influence of the spilt-off band

Electronic structure calculations in p-type B delta-doped Si quantum wells are carried out self-consistently and within the Thomas-Fermi approximation . The calculations assume a three independent (hh + Ih + so) hole band mode l. The numerically calculated spectra are compared between themselves and w ith experimental results, making emphasis on the effects of the inclusion o f the so hole band. The use of a three-independent band model is presented for the first time in a Thomas-Fermi approximation. Despite of the simplici ty of this theory, comparison of the obtained results with self-consistent theoretical calculations gives goad agreements.