Citation
Mp. Hernandez et al., Barrier height behavior for In/CdTe polycrystalline junction, PHYS ST S-B, 220(1), 2000, pp. 209-213
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972
→ ACNP
Volume
220
Issue
1
Year of publication
2000
Pages
209 - 213
Database
ISI
SICI code
0370-1972(200007)220:1<209:BHBFIP>2.0.ZU;2-H
Abstract
The chemical composition of CdTe surfaces has been studied for In over poly
crystalline CdTe using I-V measurement. The obtained barrier height present
s a spatial distribution on CdTe surface and an inhomogeneous barrier heigh
t is the cause of the ideal behavior deviation in the I-V curves. Multi-lev
el Fermi pinning within the contact that is produced by aggregate of Te-ric
h and Cd-rich areas is a consistent explanation for the barrier height inho
mogeneities.