Study of nonradiative recombination mechanisms in semiconductors by photoacoustic measurements

In this work the application of photoacoustic technique (PA) for the study of recombination mechanisms in semiconductor substrates and heterostructure s is briefly reviewed. A theoretical model which allows the investigation o f nonradiative recombination time and surface recombination velocity was de veloped. We present the experimental values of such parameters obtained by fitting the theoretical curves to the experimental PA phase data for SiN:H/ Si, AlGaAs/GaAs and InGaAsSb/GaSb single heterostructures.