Although strongly bound chemisorbates at low coverage readily diffuse on me
tal surfaces at 300 K, they generally do not diffuse on semiconductor surfa
ces because of a large corrugation in the adsorbate-surface interaction pot
ential. Chlorine chemisorbed on the Ga-rich GaAs(001)-c(8 x 2) surface has
anomalously fast diffusion even though the chemisorption state is tightly b
ound and highly specific. Simple Hartree-Fock total energy calculations sug
gest that this diffusion of strongly bound adsorbates can occur at 300 K be
cause there are multiple nearly degenerate adsorbate sites.