Dephasing times in quantum dots due to elastic LO phonon-carrier collisions

Citation
Av. Uskov et al., Dephasing times in quantum dots due to elastic LO phonon-carrier collisions, PHYS REV L, 85(7), 2000, pp. 1516-1519
Citations number
22
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
85
Issue
7
Year of publication
2000
Pages
1516 - 1519
Database
ISI
SICI code
0031-9007(20000814)85:7<1516:DTIQDD>2.0.ZU;2-Q
Abstract
Interpretation of experiments on quantum dot (QD) lasers presents a challen ge: the phonon bottleneck, which should strongly suppress relaxation and de phasing of the discrete energy states, often seems to be inoperative. We su ggest and develop a theory for an intrinsic mechanism for dephasing in QDs: second-order elastic interaction between quantum dot charge carriers and L O phonons. The calculated dephasing times are of the order of 200 fs at roo m temperature, consistent with experiments. The phonon bottleneck thus does not prevent significant room temperature dephasing.