RELIABILITY IN FLUORINATED CMOS DEVICES

Authors
ZHANG GQ YAN RL REN DY YU XF LU W
Citation
Gq. Zhang et al., RELIABILITY IN FLUORINATED CMOS DEVICES, Microelectronics, 28(5), 1997, pp. 581-585
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics → ACNP
ISSN journal
00262692
Volume
28
Issue
5
Year of publication
1997
Pages
581 - 585
Database
ISI
SICI code
0026-2692(1997)28:5<581:RIFCD>2.0.ZU;2-2
Abstract
Improved ionizing radiation hardness in fluorinated CD4007 inverters h as been obtained. The slight increase of threshold voltage and the evi dent degradation of quiescent supply current in CD4007 happened after high temperature storage. The quiescent supply current degradation ind uced by high temperature can be restrained by introducing minute amoun ts of fluorine into gate oxides. (C) 1997 Elsevier Science Ltd.