Coherent plasmon-phonon coupled modes in intrinsic bulk GaAs are investigat
ed for excitation energies around the band gap. The frequencies of the cohe
rent terahertz plasmons lie on the lower branch of the plasmon-phonon coupl
ed modes. Their damping times show a strong increase for high excitation de
nsities. Taking advantage of strong absorption saturation during the excita
tion process, one can adjust the degree of coupling between coherent LO pho
nons and plasmons by tuning the excitation energy by a few millielectronvol
ts. Ensemble Monte Carlo simulations confirm the existence of an oscillator
y built-in electric field after optical excitation of electron-hole pairs.