The field, time and fluence dependencies of trap generation in silicon oxides between 5 and 13.5 nm thick

Authors
Citation
D. Qian et Dj. Dumin, The field, time and fluence dependencies of trap generation in silicon oxides between 5 and 13.5 nm thick, SEMIC SCI T, 15(8), 2000, pp. 854-861
Citations number
50
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
15
Issue
8
Year of publication
2000
Pages
854 - 861
Database
ISI
SICI code
0268-1242(200008)15:8<854:TFTAFD>2.0.ZU;2-D
Abstract
Trap generation in oxides between 5 and 13.5 nm thick has been measured as a function of the oxide electric field, stress time and electron fluence du ring constant-voltage stresses. It was found that the trap generation measu red under all stress conditions and for all thicknesses of oxides could be described by a single Eyring equation independent of stress polarity or sub strate type. This Eyring formulation for the trap generation was used to su pport the electric field (E-model) of oxide breakdown. The field-dependent activation energy obtained from the trap generation data predicted both the ultimate held strength of silicon oxide and a field-dependent breakdown ac tivation energy very close to that observed for long-time, low-field breakd own measurements. The field acceleration of trap generation was found to be significantly different from that of breakdown because of the sublinear ti me dependence of trap generation.