The field, time and fluence dependencies of trap generation in silicon oxides between 5 and 13.5 nm thick

Trap generation in oxides between 5 and 13.5 nm thick has been measured as a function of the oxide electric field, stress time and electron fluence du ring constant-voltage stresses. It was found that the trap generation measu red under all stress conditions and for all thicknesses of oxides could be described by a single Eyring equation independent of stress polarity or sub strate type. This Eyring formulation for the trap generation was used to su pport the electric field (E-model) of oxide breakdown. The field-dependent activation energy obtained from the trap generation data predicted both the ultimate held strength of silicon oxide and a field-dependent breakdown ac tivation energy very close to that observed for long-time, low-field breakd own measurements. The field acceleration of trap generation was found to be significantly different from that of breakdown because of the sublinear ti me dependence of trap generation.