Sensing behavior of TiO2 thin films exposed to air at low temperatures

Citation
A. Rothschild et al., Sensing behavior of TiO2 thin films exposed to air at low temperatures, SENS ACTU-B, 67(3), 2000, pp. 282-289
Citations number
19
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
09254005 → ACNP
Volume
67
Issue
3
Year of publication
2000
Pages
282 - 289
Database
ISI
SICI code
0925-4005(20000901)67:3<282:SBOTTF>2.0.ZU;2-3
Abstract
The sensing behavior of thin TiO2 films exposed to air pulses was studied b y means of electrical conductivity measurements. The TiO2 rutile films, wit h a grain size of similar to 20-30 nm, were deposited on oxidized Si substr ates by means of reactive sputtering and subsequently vacuum annealed (redu ced) at 400 degrees C. The films were exposed to air pulses at temperatures between 100 degrees C and 325 degrees C and their electrical conductivity was measured with embedded interdigital Au electrodes. When air was introdu ced into the system, the conductivity decreased and vice-versa. The conduct ivity changes during identical pulses were the same and reproducible, thoug h the conductivity underwent some drift. The kinetics of the conductivity response during a pulse of air followed a logarithmic law, typical of Elovich-Roginsky chemisorption kinetics, during the first stage of exposure and a modified parabolic law, typical of oxida tion kinetics, afterwards. A two-stage model is proposed to describe the re sponse kinetics which involves first surface processes where charge transfe r to oxygen adsorbates dominates followed by oxidation of the pre-reduced n onstoichiometric TiO2-x film by diffusion of oxygen. (C) 2000 Elsevier Scie nce S.A. All rights reserved.