Formation of hexagonal-wurtzite germanium by pulsed laser ablation

Citation
Y. Zhang et al., Formation of hexagonal-wurtzite germanium by pulsed laser ablation, SOL ST COMM, 115(12), 2000, pp. 657-660
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
115
Issue
12
Year of publication
2000
Pages
657 - 660
Database
ISI
SICI code
0038-1098(2000)115:12<657:FOHGBP>2.0.ZU;2-2
Abstract
A stable phase of relatively large hexagonal-wurtzite germanium (lonsdaleit e) crystals (up to 10 mu m) was formed when germanium was directly deposite d at low pressure using pulsed ultraviolet laser ablation. Films were grown on various substrates at room temperature from a single crystal, cubic ger manium target. Crystallites of the hexagonal-wurtzite phase of germanium we re clearly identified using selected area electron diffraction. Further cha racterizations of the films were made using X-ray diffraction and confocal scanning micro-Raman spectroscopy. (C) 2000 Published by Elsevier Science L td.