Electronic subband of single Si delta-doped GaAs structures

We have theoretically investigated the subband structure of single Si delta -doped GaAs inserted into a quantum well at T = 0 K. We will discuss the in fluence of the delta-doping concentration, the delta-layer thickness and di ffusion of donor impurities. The spread of the impurities are taken into ac count in two different models: (i) a uniform distribution and (ii) a nonuni form distribution. In this paper, the nonuniform distribution is different from the Gaussian distribution use of other authors. The electronic structu res have been calculated by solving the Schrodinger and Poisson equations s elf-consistently. We thus find the confining potential, the subband energie s and their eigen envelope functions, the subband occupations and Fermi ene rgy. (C) 2000 Academic Press.