Tinitron process for low pressure nitriding of titanium and its alloys

Citation
R. Foi et al., Tinitron process for low pressure nitriding of titanium and its alloys, SURF ENG, 16(3), 2000, pp. 205-209
Citations number
10
Categorie Soggetti
Material Science & Engineering
Journal title
SURFACE ENGINEERING
ISSN journal
02670844 → ACNP
Volume
16
Issue
3
Year of publication
2000
Pages
205 - 209
Database
ISI
SICI code
0267-0844(2000)16:3<205:TPFLPN>2.0.ZU;2-7
Abstract
Titanium has been known for nearly 200 years and in mineral form is the fou rth most commonly, occurring element. Although titanium is such a common el ement, the pure metal is still expensive. Nevertheless, titanium is being m ore and more extensively used in a wide I range of applications, from aeros pace components to leisure of applications. In fact the main drawback of ti tanium, despite its cost, is that it usually, needs additional treatments t o enhance its wear expensive capabilities. These treatments are usually exp ensive, which limits their, use to high added value parts. The Tinitron pro cess is a gaseous treatment giving excellent wear resistance to titanium pa rts at the lowest possible cost for a wide range of applications. This ther mochemical treatment is based on nitrogen diffusion into titanium treatment is based on nitrogen diffusion into titanium without the use of a plasma. The diffusion of nitrogen creates a compound layer of TiN+Ti2N and a diffus ion layer of Ti(N) underneath. As the treatment is based on diffusion there are no adhesion problems. The compound and diffusion layers harden the sur face of the material and the compound layer increases its wear resistance. Furthermore, the treatment is performed under vacuum at low pressure, thus minimising gas consumption and environmental impact. Tinitron permits homog eneous bulk treatment of complex shaped parts (grooves, holes, etc.) and it can be used in the medical field as the process is 100% biocompatible. Fin ally, Tinitron is less expensive than standard titanium surface treatments. (C) 2000 IoM Communications Ltd.