Characterisation of sol-gel derived PZT films prepared at low temperature

Authors
Miyazawa, K Yano, J Kaga, M Ito, Y Ito, K Maeda, R
Citation
K. Miyazawa et al., Characterisation of sol-gel derived PZT films prepared at low temperature, SURF ENG, 16(3), 2000, pp. 239-241
Citations number
5
Categorie Soggetti
Material Science & Engineering
Journal title
SURFACE ENGINEERING
ISSN journal
02670844 → ACNP
Volume
16
Issue
3
Year of publication
2000
Pages
239 - 241
Database
ISI
SICI code
0267-0844(2000)16:3<239:COSDPF>2.0.ZU;2-C
Abstract
Lead zirconate titanate (PZT) thin films doped with C-60 were fabricated on Pt/Ti/SiO2/Si substrates at 400-500 degrees C, using solutions prepared by the sol-gel method. Formation of pyrochlore was suppressed, nad [001] pref erential orientation of perovskite phase was developed by adding C-60 disso lved in toluene. The perovskite formation temperature was also markedly low ered by using the toluene solution of C-60. (C) 2000 IoM Communications Ltd .