Vv. Malyshev et al., Theoretical foundations of galvanic treatment of dielectrics and semiconductors in ionic melts, THEOR F CH, 34(4), 2000, pp. 391-402
The behaviors of diamond, cubic boron nitride, and silicon and boron carbid
es in ionic melts were analyzed thermodynamically and studied by potentiome
try and corrosion measurements. The redox reactions occurring at the dielec
tric (semiconductor)/ionic melt interface were assumed to give rise to an e
lectrochemical potential and surface conductivity. Controllability of the e
lectrochemical potential makes metallization of the materials considered po
ssible. Techniques are suggested for the electrodeposition of molybdenum, t
ungsten, and their carbides onto diamond, boron nitride, silicon carbide, a
nd boron carbide particles.