Theoretical foundations of galvanic treatment of dielectrics and semiconductors in ionic melts

The behaviors of diamond, cubic boron nitride, and silicon and boron carbid es in ionic melts were analyzed thermodynamically and studied by potentiome try and corrosion measurements. The redox reactions occurring at the dielec tric (semiconductor)/ionic melt interface were assumed to give rise to an e lectrochemical potential and surface conductivity. Controllability of the e lectrochemical potential makes metallization of the materials considered po ssible. Techniques are suggested for the electrodeposition of molybdenum, t ungsten, and their carbides onto diamond, boron nitride, silicon carbide, a nd boron carbide particles.