CeO2 buffer layers on R-plane Al2O3

We present a summary of some published results concerning the preparation a nd study of the properties of CeO2 buffer layers on R-plane Al2O3 Further, we discuss some of our results which concern to CeO2 films prepared by elec tron gun-evaporation, by on-axis rf magnetron sputtering in mixture of Ar a nd O-2 and by off-axis rf diode sputtering in pure oxygen. As-deposited alm s show granular structure except for films prepared by electron gun-evapora tion which already consist of rectangular blocks. Atomic Force Microscopy ( AFM) reveals that the presence of even negligible (111) parasitic peak in X -ray diffraction spectrum of the as-deposited films strongly influences the rocking curve and surface morphology after post-deposition heat treatment in air. The post-annealings suppress (111) peak in X-ray spectrum, however, the rocking curves and AFM results differ depending on the method of prepa ration. Some rocking curves seem to be a superposition of a very narrow roc king curve (0.04 degrees) with a broader one (0.5-1.4 degrees). The origin of such behaviour is discussed.