Epitaxial growth of laminar crystalline silicon on CaF2

Si heteroepitaxy on CaF2 was studied with x-ray photoelectron spectroscopy and diffraction and low-energy electron diffraction to determine the interf ace bonding and silicon overlayer growth mode. The CaF2 surface was prepare d by irradiation with low-energy electrons and exposure to arsenic, which r eplaced surface fluorine atoms with arsenic. Thin Si films (1.3 nm) were su bsequently deposited at 550 degrees C. The Si films completely cover the Ca F2 substrate and have a type-B orientation. The resultant interface has Si- Ca bonds, with the As surfactant layer terminating the Si surface in a 1x1 structure. (C) 2000 American Institute of Physics. [S0003-6951(00)02935-1].