Structural and luminescence properties of nanostructured ZnS : Mn

We have studied structural and luminescence properties of nanostructured (N S-) ZnS:Mn which has potential applications in thin-film electroluminescenc e (TFEL) devices. As a NS-ZnS:Mn system, a ZnS:Mn/Si3N4 multilayer having t hicknesses of 2.5 nm for ZnS and 0.6 nm for Si3N4 was prepared by a convent ional rf-magnetron sputtering method. Grazing incidence x-ray reflectometry and x-ray diffractometry show that ZnS:Mn nanocrystals were formed between the amorphous Si3N4 layers. Photoluminescence intensity associated with th e Mn2+ transitions per total thickness of the ZnS:Mn layers is increased in NS-ZnS:Mn in comparison with that of the ZnS:Mn thin film, indicating the effects due to quantum confinement. The TFEL device with NS-ZnS:Mn as an em ission layer exhibits a reddish-orange broad band emission with the maximum luminance of 2.8 cd/m(2) under the 1-kHz sinusoidal wave operation at a vo ltage of 20.5 V0-p. (C) 2000 American Institute of Physics. [S0003-6951(00) 05035-X].