Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands

Authors
Liao, XZ Zou, J Cockayne, DJH Jiang, ZM Wang, X Leon, R
Citation
Xz. Liao et al., Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands, APPL PHYS L, 77(9), 2000, pp. 1304-1306
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
9
Year of publication
2000
Pages
1304 - 1306
Database
ISI
SICI code
0003-6951(20000828)77:9<1304:CAIIOS>2.0.ZU;2-0
Abstract
The composition distribution of Ge(Si)/Si (001) islands grown at 700 degree s C by molecular beam epitaxy is investigated using high-spatial resolution x-ray energy dispersive spectrometry in a scanning transmission electron m icroscope. Island shapes are investigated using cross-section transmission electron microscopy. Results show nonuniformity of the composition distribu tion in the islands, which affects the evolution of the aspect ratios of he ight-to-base diameter of dislocated islands. (C) 2000 American Institute of Physics. [S0003-6951(00)05235-9].