Photoluminescence from sub-nanometer-thick GaN/Al0.8Ga0.2N quantum wells

Photoluminescence (PL) spectra were measured for sub-nanometer-thick GaN qu antum wells (QWs) with Al0.8Ga0.2N barriers, which were grown by atmospheri c-pressure metal-organic chemical-vapor deposition. The thickness of the Ga N QW layers was systematically varied from 1 to 4 ML. We clearly observed a PL peak at room temperature at a wavelength as short as 247 nm (5.03 eV) f rom 1-ML-thick QWs. The effective confinement energy, or difference between this recombination energy and the band gap of bulk GaN, is as large as 1.6 3 eV. (C) 2000 American Institute of Physics. [S0003-6951(00)02235-X].