Electrical degradation of (Ba, Sr)TiO3 (BST) thin films was investigated by
annealing Pt/BST/Pt structures in D-2/N-2 and D2O-containing furnace ambie
nts. Deuterium depth profiles were correlated to the current-voltage charac
teristics of the BST thin films. The dependence of the D distribution and l
eakage current density on the D incorporation method indicates that mobile,
donor-type deuterium defects dissolve in large concentrations within BST t
hin films, and that their effects on leakage properties depend on the natur
e of their charge compensation. A mechanism is proposed for the leakage cur
rent increase after D-2/N-2 anneals, and good quantitative agreement betwee
n the theoretical results and experimental data is demonstrated. (C) 2000 A
merican Institute of Physics. [S0003-6951(00)03335-0].