Deuterium-induced degradation of (Ba, Sr)TiO3 films

Citation
Jh. Ahn et al., Deuterium-induced degradation of (Ba, Sr)TiO3 films, APPL PHYS L, 77(9), 2000, pp. 1378-1380
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
9
Year of publication
2000
Pages
1378 - 1380
Database
ISI
SICI code
0003-6951(20000828)77:9<1378:DDO(SF>2.0.ZU;2-E
Abstract
Electrical degradation of (Ba, Sr)TiO3 (BST) thin films was investigated by annealing Pt/BST/Pt structures in D-2/N-2 and D2O-containing furnace ambie nts. Deuterium depth profiles were correlated to the current-voltage charac teristics of the BST thin films. The dependence of the D distribution and l eakage current density on the D incorporation method indicates that mobile, donor-type deuterium defects dissolve in large concentrations within BST t hin films, and that their effects on leakage properties depend on the natur e of their charge compensation. A mechanism is proposed for the leakage cur rent increase after D-2/N-2 anneals, and good quantitative agreement betwee n the theoretical results and experimental data is demonstrated. (C) 2000 A merican Institute of Physics. [S0003-6951(00)03335-0].