Amorphous silicon junction field-effect transistor for digital and analog applications

A hydrogenated amorphous silicon field-effect transistor suitable for digit al and analog applications is described. The device consists of a p(+)-i-n( -) junction, with the drain and source contacts connected to the n(-) layer and the control gate electrode to the p(+) layer. As in the corresponding crystalline junction field-effect transistor, the channel resistivity is mo dulated by the gate voltage. The selection of the thickness of the intrinsi c layer and the doping and thickness of the n layer is critical for correct operation of the device. A device with a well defined triode and saturatio n region was manufactured. A transconductance of 1.5x10(-6) A/V at V-DS=25 V was achieved. This value is comparable to that of state-of-the-art thin-f ilm transistors. (C) 2000 American Institute of Physics. [S0003-6951(00)011 35-9].