Detection of terahertz radiation with low-temperature-grown GaAs-based photoconductive antenna using 1.55 mu m probe

Citation
M. Tani et al., Detection of terahertz radiation with low-temperature-grown GaAs-based photoconductive antenna using 1.55 mu m probe, APPL PHYS L, 77(9), 2000, pp. 1396-1398
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
9
Year of publication
2000
Pages
1396 - 1398
Database
ISI
SICI code
0003-6951(20000828)77:9<1396:DOTRWL>2.0.ZU;2-E
Abstract
THz radiation is detected by a low-temperature-grown GaAs (LT-GaAs) photoco nductive antenna probed with a 1.55 mu m probe laser. The detection efficie ncy is found to be approximately 10% of that obtained with a 780 nm probe. From the nonquadratic dependence of photoconductivity on laser intensity, t wo-step photoabsorption mediated by midgap states in LT-GaAs is suggested, instead of the two-photon absorption, as the primary process for the photoc onductivity. (C) 2000 American Institute of Physics. [S0003-6951(00)01335-8 ].