Electronic distribution in superlattice quantum cascade lasers

Citation
M. Troccoli et al., Electronic distribution in superlattice quantum cascade lasers, APPL PHYS L, 77(8), 2000, pp. 1088-1090
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
8
Year of publication
2000
Pages
1088 - 1090
Database
ISI
SICI code
0003-6951(20000821)77:8<1088:EDISQC>2.0.ZU;2-R
Abstract
The electron population in the excited miniband of quantum cascade structur es with intrinsic superlattice active regions is extracted from the fine st ructure analysis of spontaneous interminiband electroluminescence spectra. At current densities typical of laser thresholds, the electrons injected in to the excited miniband of a (GaInAs)(6 nm)/(AlInAs)(1.8 nm) superlattice a re described by a nonequilibrium thermal distribution characterized by temp eratures T-e> 200 K, much higher than the lattice temperature T-L=15 K. (C) 2000 American Institute of Physics. [S0003-6951(00)04534-4].