2.12 mu m InGaAs-InGaAlAs-InP diode lasers grown in solid-source molecular-beam epitaxy

Authors
Kuang, GK Bohm, G Grau, M Rosel, G Meyer, R Amann, MC
Citation
Gk. Kuang et al., 2.12 mu m InGaAs-InGaAlAs-InP diode lasers grown in solid-source molecular-beam epitaxy, APPL PHYS L, 77(8), 2000, pp. 1091-1092
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
8
Year of publication
2000
Pages
1091 - 1092
Database
ISI
SICI code
0003-6951(20000821)77:8<1091:2MMIDL>2.0.ZU;2-S
Abstract
We have fabricated InGaAs-InGaAlAs-InP strained quantum well lasers with wa velength as long as 2.12 mu m in solid-source molecular-beam epitaxy. A con tinuous-wave threshold current density of 780 A/cm(2) at room temperature a nd a characteristic temperature of 48 K have been achieved. (C) 2000 Americ an Institute of Physics. [S0003-6951(00)04834-8].