Optical evidence of intrinsic quantum wells in the transparent conducting oxide beta-Ga2O3

A peculiar peak structure is observed in the optical absorption edge of bet a-Ga2O3 at low temperature. These peaks appear in an energy range correspon ding to the excitation of the acceptor defects. It is suggested that some o f these acceptors be assembled in low dimensional clusters with size about 30-40 Angstrom and forming potential wells with depth about 0.5 eV. The ext ra peaks are interpreted as transitions between the discrete energy levels of these potential wells and the conduction band. (C) 2000 American Institu te of Physics. [S0003-6951(00)03734-7].