Electrical domain fixing of photorefractive index gratings in (K0.5Na0.5)(0.2)(Sr0.75Ba0.25)(0.9)Nb2O6 crystals

Authors
Shen, XN Zhao, JH Wang, RB Cheng, ZX Zhang, SJ Chen, HC
Citation
Xn. Shen et al., Electrical domain fixing of photorefractive index gratings in (K0.5Na0.5)(0.2)(Sr0.75Ba0.25)(0.9)Nb2O6 crystals, APPL PHYS L, 77(8), 2000, pp. 1206-1208
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
8
Year of publication
2000
Pages
1206 - 1208
Database
ISI
SICI code
0003-6951(20000821)77:8<1206:EDFOPI>2.0.ZU;2-C
Abstract
Electrical domain fixing in Cu- and Mn-doped (K0.5Na0.5)(0.2)(Sr0.75Ba0.25) (0.9)Nb2O6 (KNSBN) crystals is presented. The relation between the applied field and the revealed grating in single and multidomain crystals is invest igated. In multidomain Mn-doped KNSBN, a revealing efficiency of over 233% is obtained. The mechanism of domain fixing in single and multidomain cryst al is discussed. (C) 2000 American Institute of Physics. [S0003-6951(00)020 34-9].