Influence of oxygen on band alignment at the organic/aluminum interface

Citation
Rir. Blyth et al., Influence of oxygen on band alignment at the organic/aluminum interface, APPL PHYS L, 77(8), 2000, pp. 1212-1214
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
8
Year of publication
2000
Pages
1212 - 1214
Database
ISI
SICI code
0003-6951(20000821)77:8<1212:IOOOBA>2.0.ZU;2-5
Abstract
The presence of adventitious oxygen is inevitable when organic/metal interf aces are formed by evaporation in high vacuum (10(-6) mbar.). In this lette r, we highlight the importance of this oxygen for band alignment, and hence , performance, in organic-based devices. The influence of controlled amount s of oxygen on band alignment in benzene/aluminum model cathode interfaces has been studied using ultraviolet photoemission in ultrahigh vacuum. We sh ow that even small amounts of oxygen significantly lower the aluminum work function with concomitant improvement in band alignment. (C) 2000 American Institute of Physics. [S0003-6951(00)02534-1].