Field emission from boron-doped polycrystalline diamond film at the nanometer level within grains

Citation
I. Andrienko et al., Field emission from boron-doped polycrystalline diamond film at the nanometer level within grains, APPL PHYS L, 77(8), 2000, pp. 1221-1223
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
8
Year of publication
2000
Pages
1221 - 1223
Database
ISI
SICI code
0003-6951(20000821)77:8<1221:FEFBPD>2.0.ZU;2-O
Abstract
Surface morphology, conductivity, and field emission properties of boron-do ped polycrystalline diamond film have been studied using scanning tunneling microscopy, current imaging tunneling spectroscopy, and separation-voltage (S-V) spectroscopy focusing on the properties within a single grain. The e mission properties show significant spatial variations within single grains at the nanometer level. S-V spectroscopy provided direct values of the fie ld required for the emission from nanometer-sized structures at the surface . Strong correlation between surface conductivity and low-field emission ha s been found. The results suggest that the emission properties of the film on the nanometer level are determined by local hydrogen termination. (C) 20 00 American Institute of Physics. [S0003-6951(00)02634-6].