Room-temperature negative differential resistance in nanoscale molecular junctions

Citation
J. Chen et al., Room-temperature negative differential resistance in nanoscale molecular junctions, APPL PHYS L, 77(8), 2000, pp. 1224-1226
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
8
Year of publication
2000
Pages
1224 - 1226
Database
ISI
SICI code
0003-6951(20000821)77:8<1224:RNDRIN>2.0.ZU;2-O
Abstract
Molecular devices are reported utilizing active self-assembled monolayers c ontaining the nitroamine [2'-amino-4,4'-di(ethynylphenyl)-5'-nitro-1-benzen ethiolate] or the nitro compound [4,4'-di(ethynylphenyl)-2'-nitro-1-benzene thiolate] as the active components. Both of these compounds have active red ox centers. Current-voltage measurements of the devices exhibited negative differential resistance at room temperature and an on-off peak-to-valley ra tio in excess of 1000:1 at low temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)03234-4].