Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon

He+ ions were implanted at 40 keV into Si [100] channel direction at room t emperature (RT) and at 350 degrees C. The Si samples were subsequently dope d with Cu in order to study the gettering of Cu atoms at the defective laye r. A subsequent annealing at 800 degrees C was performed in order to anneal the implantation damage and redistribute the Cu into the wafer. The sample s were analyzed by Rutherford backscattering channeling and transmission el ectron microscopy techniques. The Cu distribution was measured by secondary ion mass spectrometry (SIMS). The SIMS experiments show that, while the 35 0 degrees C implant induces gettering at the He projected range (R-p) regio n, the same implant performed at RT has given as a result, gettering at bot h the R-p and R-p/2 depths. Hence, this work demonstrates that the R-p/2 ef fect can be induced by a light ion implanted at low energy into channeling direction. (C) 2000 American Institute of Physics. [S0003-6951(00)04133-4].