Electron cyclotron resonance plasma etching of GaSb-based alloys

Authors
Ahmad, RU Nagy, G Osgood, RM Turner, GW Manfra, MJ Chludzinski, JW
Citation
Ru. Ahmad et al., Electron cyclotron resonance plasma etching of GaSb-based alloys, APPL PHYS L, 77(7), 2000, pp. 1008-1010
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
7
Year of publication
2000
Pages
1008 - 1010
Database
ISI
SICI code
0003-6951(20000814)77:7<1008:ECRPEO>2.0.ZU;2-X
Abstract
Electron cyclotron resonance plasma etching is used to fabricate submicrome ter-scale GaInAsSb/AlGaAsSb multiple-quantum-well structures. Smooth and an isotropic features at low substrate bias were obtained under appropriate co nditions. The etch quality was investigated with photoluminescence spectros copy; luminescence data from the etched features agree well with a model th at assumes a low-damage etching process. (C) 2000 American Institute of Phy sics. [S0003-6951(00)03633-0].