Luminescence properties of GaN and Al0.14Ga0.86N/GaN superlattice doped with europium

We report the observation of visible photoluminescence and cathodoluminesce nce of Eu3+ ions implanted in GaN and Al0.14Ga0.86N/GaN superlattice. The s harp characteristic emission lines corresponding to Eu3+ intra-4f(6)-shell transitions are resolved and observed over the temperature range of 7-330 K . The luminescence shows dominant transitions D-5(0)-->F-7(1,2,3) and weake r D-5(0)-->F-7(4,5,6) and D-5(1)-->F-7(1). The luminescence emission is ver y weakly temperature dependent. The intensity of Eu3+ emission from Al0.14G a0.86N/GaN superlattice annealed in N-2 is similar to 58% stronger than fro m Eu3+ in the GaN layer. The Al0.14Ga0.86N/GaN superlattice and GaN epilaye rs may be suitable as a material for visible optoelectronic devices. (C) 20 00 American Institute of Physics. [S0003- 6951(00)01332-2].