Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots

Authors
Paskov, PP Holtz, PO Monemar, B Garcia, JM Schoenfeld, WV Petroff, PM
Citation
Pp. Paskov et al., Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots, APPL PHYS L, 77(6), 2000, pp. 812-814
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
6
Year of publication
2000
Pages
812 - 814
Database
ISI
SICI code
0003-6951(20000807)77:6<812:PUIISQ>2.0.ZU;2-X
Abstract
We report up-converted photoluminescence in a structure with InAs quantum d ots embedded in GaAs. An efficient emission from the GaAs barrier is observ ed with resonant excitation of both the dots and the wetting layer. The int ensity of the up-converted luminescence is found to increase superlinearly with the excitation density. The results suggest that the observed effect i s due to a two-step two-photon absorption process involving quantum dot sta tes. (C) 2000 American Institute of Physics. [S0003- 6951(00)02232-4].