Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition

Authors
Yi, SS Hansen, DM Inoki, CK Harris, DL Kuan, TS Kuech, TF
Citation
Ss. Yi et al., Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition, APPL PHYS L, 77(6), 2000, pp. 842-844
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
6
Year of publication
2000
Pages
842 - 844
Database
ISI
SICI code
0003-6951(20000807)77:6<842:LEOOGO>2.0.ZU;2-X
Abstract
Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates patterned with SiO2 or Si3N4 films by metalorganic chemical vapor deposition was acco mplished using trimethylgallium and trimethylantimony. Transmission electro n microscopy measurements show that coalesced films grown on GaSb substrate s exhibit defect-free materials, while those on GaAs substrates show regula r, small-angle crystal tilting originating from large lattice mismatch. (C) 2000 American Institute of Physics. [S0003-6951(00)04432-6].