Strong and stable ultraviolet luminescence in porous silicon in situ passivated by manganese

Citation
Qw. Chen et al., Strong and stable ultraviolet luminescence in porous silicon in situ passivated by manganese, APPL PHYS L, 77(6), 2000, pp. 854-856
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
6
Year of publication
2000
Pages
854 - 856
Database
ISI
SICI code
0003-6951(20000807)77:6<854:SASULI>2.0.ZU;2-O
Abstract
A strong and stable ultraviolet photoluminescence (PL) band (370 nm) togeth er with a red luminescence band around 670 nm with a 730 nm shoulder were o bserved in Mn-passivated porous silicon (PS) prepared by the hydrothermal t echnique. The surface structure is examined by Fourier infrared and x-ray p hotoelectron spectroscopy analysis. The 670 nm band was confirmed to be the usually observed PL band in PS, and the appearance of the 370 nm band and 730 nm shoulder peak was interpreted based on surface structure characteriz ation and spectroscopy measurements. (C) 2000 American Institute of Physics . [S0003-6951(00)04230-3].