Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices

The diffusion length, L, of electrons in Mg-doped p-GaN grown by metal-orga nic chemical vapor deposition was found to increase linearly from 0.55 to 2 .0 mu m during 1500 s of electron beam irradiation. Similar trends were obs erved for p-type Mg-doped GaN and AlGaN/GaN superlattices grown by molecula r-beam epitaxy. While the electron diffusion length in p-(Al)GaN depends on irradiation time, the diffusion length of holes in n-GaN remains unchanged , with L similar to 0.35 mu m. We attribute the observed diffusion length c hange in p-(Al)GaN to an increase in the minority carrier lifetime. This in crease is likely due to electron beam-induced charging of the deep metastab le centers associated with Mg doping. The concentration of these centers wa s estimated to be similar to 10(18) cm(-3). The minority carrier diffusion length increase in p-(Al)GaN, which occurs during electron injection, may l ead to self-improvement of the bipolar transistor characteristics. (C) 2000 American Institute of Physics. [S0003-6951(00)03532-4].