Imaging of charge transport in polycrystalline diamond using ion-beam-induced charge microscopy

Citation
Pj. Sellin et al., Imaging of charge transport in polycrystalline diamond using ion-beam-induced charge microscopy, APPL PHYS L, 77(6), 2000, pp. 913-915
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
6
Year of publication
2000
Pages
913 - 915
Database
ISI
SICI code
0003-6951(20000807)77:6<913:IOCTIP>2.0.ZU;2-5
Abstract
Studies have been made using a 1 mu m spatial resolution ion-beam-induced c harge (IBIC) technique of the charge transport distribution in polycrystall ine diamond produced by chemical vapor deposition. The devices tested used a coplanar electrode structure fabricated only on the growth side of the di amond film, and were predominantly sensitive to charge transport close to t he growth surface of the diamond film where the diamond crystallites are la rgest. Irradiation with 5.48 MeV alpha particles gave a pulse height spectr um with a broad full energy peak and a mean charge collection efficiency of 15%. IBIC images obtained using microfocus proton and alpha particle beams showed spatially resolved regions of high charge collection efficiency cor relating to individual diamond crystallites with a typical width of 20 mu m , as observed by secondary electron microscopy. (C) 2000 American Institute of Physics. [S0003-6951(00)02429-3].