Plasma etching: principles, mechanisms, application to micro- and nano-technologies

Citation
C. Cardinaud et al., Plasma etching: principles, mechanisms, application to micro- and nano-technologies, APPL SURF S, 164, 2000, pp. 72-83
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
164
Year of publication
2000
Pages
72 - 83
Database
ISI
SICI code
0169-4332(20000901)164:<72:PEPMAT>2.0.ZU;2-V
Abstract
Nowadays, plasma-etching processes are asked to produce patterns from the n anometer to the micrometer range with the same efficiency. The very severe requirements in terms of etch rate, selectivity, profile control and surfac e damage plasma-etching processes lead to, have been at the origin of the d evelopment of mechanistic studies by means of plasma diagnostics and surfac e analysis, as well as the development of new etching devices. We review he re the basic concepts of plasma etching, and using examples, we describe mo re in details important features. We recall, in particular, the important r ole of the surface layer, the ion bombardment and the substrate temperature . (C) 2000 Elsevier Science B.V. All rights reserved.