Growth and optimization of InAs/GaSb and GaSb/InAs interfaces

In order to optimize the molecular beam epitaxy growth of indium arsenide-g allium antimonide structures, we study the effects of the stacking sequence of the interfacial monolayer and of the growth temperature. To this end, G aSb/InAs and InAs/GaSb heterojunctions involving ultra-thin epilayers have been fabricated at 350 degrees C, 400 degrees C and 450 degrees C with In-S b- or Ga-As-like interfaces. The structures have been investigated by refle ction high-energy electron diffraction, Anger electron microscopy and atomi c force microscopy. The best growth condition for InAs(100) as well as GaSb (100) have been obtained with a substrate temperature of 400 degrees C and an In-Sb-like InAs-GaSb interface. (C) 2000 Elsevier Science B.V. All right s reserved.