Macrostep and mound formation during AlGaAs growth on vicinal GaAs(110) studied by scanning tunneling microscopy

Authors
Hasegawa, S Arakawa, K Oooka, H Nakashima, H
Citation
S. Hasegawa et al., Macrostep and mound formation during AlGaAs growth on vicinal GaAs(110) studied by scanning tunneling microscopy, APPL SURF S, 162, 2000, pp. 430-434
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
162
Year of publication
2000
Pages
430 - 434
Database
ISI
SICI code
0169-4332(200008)162:<430:MAMFDA>2.0.ZU;2-7
Abstract
Scanning tunneling microscopy connected with molecular beam epitaxy (MBE) i s used to investigate configurations of macrosteps formed by MBE growth of AlGaAs/GaAs superlattices on an atomic scale. It is found that macrosteps c onsist of step bunches and vicinal (110) terraces. The former contain highe r density of steps, More interestingly, the latter are covered with a lot o f semicircular-shaped mounds consisting of atomic steps with (110) terraces several tens of nm wide. Our findings provide new insight into the mechani sm of the macrostep formation. (C) 2000 Elsevier Science B.V. All rights re served.