Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001)

Authors
Brault, J Gendry, M Marty, O Pitaval, M Olivares, J Grenet, G Hollinger, G
Citation
J. Brault et al., Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001), APPL SURF S, 162, 2000, pp. 584-589
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
162
Year of publication
2000
Pages
584 - 589
Database
ISI
SICI code
0169-4332(200008)162:<584:SVSOSI>2.0.ZU;2-V
Abstract
Using atomic force microscopy (AFM) imaging, transmission electron microsco py (TEM) and photoluminescence (PL), we have studied InAs stacked islands o n InP(001) versus the InAlAs spacer layer thickness (SLT). We have found th at first wire-libe island shape is strongly favored by such a stacking proc ess and second in the 10-25 nm SLT range, the wire size and height are depe ndent on the SLT. TEM images show off a new surprising staggered vertical i sland organization that can be explained by the phase separation appearing in the InAlAs spacer layers. (C) 2000 Elsevier Science B.V. All rights rese rved.