Self-formed quantum nano-structures by selective area MOVPE and their application to GaAs single electron devices

Novel quantum nano-structures which consist of quantum dots connected with quantum wires through tunneling barriers have successfully been fabricated using selective area metalorganic vapor phase epitaxy (SA-MOVPE) and have b een applied to form single electron devices. GaAs/AlGaAs modulation doped h eterostructures are grown on a GaAs (001) substrate partially masked with S iNx. A quasi-1 dimensional electron gas (Q-1DEG) is formed in a narrow wire -like opening, which has two prominences and a dent to modulate the channel width. From the transport properties, we confirm that a quantum dot and qu antum wires connected through tunneling barriers, that is, a single electro n transistor structure, is naturally formed in the part of the channel with modulated width. We will discuss the mechanism by which the dot and tunnel barriers are formed by SA-MOVPE. (C) 2000 Elsevier Science B.V. All rights reserved.