Anodic oxidation of GaInP2

Authors
Khaselev, O Turner, JA
Citation
O. Khaselev et Ja. Turner, Anodic oxidation of GaInP2, CORROS SCI, 42(10), 2000, pp. 1831-1838
Citations number
20
Categorie Soggetti
Material Science & Engineering
Journal title
CORROSION SCIENCE
ISSN journal
0010938X → ACNP
Volume
42
Issue
10
Year of publication
2000
Pages
1831 - 1838
Database
ISI
SICI code
0010-938X(200010)42:10<1831:AOOG>2.0.ZU;2-4
Abstract
Anodic films have been grown on GaInP2 at a constant applied current densit y in phosphate solutions with pH 4, 7 and 10. XPS analysis revealed that th e chemical composition of the anodic films formed in the solutions with pH 7 and 10 is non-uniform with In excess and corresponding Ga and P deficienc y in outer layer. The anodic films formed in the solution with pH 4 had uni form composition, apparently due to preferential dissolution of In in this solution. The anodic films were stable when exposed to air for several week s. (C) 2000 Elsevier Science Ltd. All rights reserved.