MeV ion-induced movement of lattice disorder in single crystalline silicon

We provide experimental evidence for the transport of atomic disorder over large distances, in device grade single-crystalline silicon, following irra diation with 200 MeV silver ions. Pile-up of lattice defects or disorder is effected at predetermined locations, spatially separated from the irradiat ion site. These are revealed by STM scans with atomic resolution, of an int ermediate region, spanning from irradiated to shadowed parts of the crystal surface. The experimental results are consistent with transport of disorde r through breather-like intrinsic localised excitations.