Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 mu m

Citation
A. Vicet et al., Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 mu m, IEE P-OPTO, 147(3), 2000, pp. 172-176
Citations number
16
Categorie Soggetti
Optics & Acoustics
Journal title
IEE PROCEEDINGS-OPTOELECTRONICS
ISSN journal
13502433 → ACNP
Volume
147
Issue
3
Year of publication
2000
Pages
172 - 176
Database
ISI
SICI code
1350-2433(200006)147:3<172:RTGQWL>2.0.ZU;2-S
Abstract
Novel GaInAsSb/GaSb multiple quantum well lasers grown by molecular beam ep itaxy have successfully operated in continous wave around 2.35 mu m at room temperature. The temperature and current tuning properties have been chara cterised by tunable diode laser absorption spectroscopy. These optical prop erties allowed a wide spectral scan from 2.27 mu m to 7.36 mu m. Experiment s of gas absorption have been carried out in direct absorption measurements in continuous wave regime. From the point of view of trace gas analysis, w avelength modulation has been successfully performed at 19 degrees C around 2.36 mu m. An external cavity has then been added to the setup to obtain m onomodal emission. These appealing results are very attractive for portable low-cost and room temperature trace pollutants analysis.