InGaAsSb photovoltaic cells with enhanced open-circuit voltage

Authors
Sulima, OV Beckert, R Bett, AW Cox, JA Mauk, MG
Citation
Ov. Sulima et al., InGaAsSb photovoltaic cells with enhanced open-circuit voltage, IEE P-OPTO, 147(3), 2000, pp. 199-204
Citations number
22
Categorie Soggetti
Optics & Acoustics
Journal title
IEE PROCEEDINGS-OPTOELECTRONICS
ISSN journal
13502433 → ACNP
Volume
147
Issue
3
Year of publication
2000
Pages
199 - 204
Database
ISI
SICI code
1350-2433(200006)147:3<199:IPCWEO>2.0.ZU;2-V
Abstract
Various Zn diffusion profiles in InGaAsSb photovoltaic cells with diffused emitters were experimentally studied. It was determined that strong built-i n electric fields near the surface lead to a reduction of the saturation va lue of the injection (J(01)) component of the dark current, and hence to th e increase of the open-circuit voltage (V-oc). A value of J(01) as low as 4 .2 x 10(-6) A/cm(2) and a value of V-oc as high as 344 mV at 3 A/cm(2) were measured.